BS IEC 63068-2:2019

BS IEC 63068-2:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Test method for defects using optical inspection
standard by British Standard / International Electrotechnical Commission, 02/08/2019

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Full Description

BS IEC 63068-2:2019 provides definitions and guidance in use of optical inspection fordetecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxialwafers. Additionally, this document exemplifies optical images to enable the detection andcategorization of the defects for SiC homoepitaxial wafers.

Cross References:
ISO 24173

All current amendments available at time of purchase are included with the purchase of this document.

Product Details

Published: 02/08/2019 ISBN(s): 9780580513749 Number of Pages: 28 File Size: 1 file , 2.7 MB Product Code(s): 30366380, 30366380, 30366380 Note: This product is unavailable in United Kingdom